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BD677

SiliconNPNDarligtonPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD676/678/680 ?DARLINGTON ?HighDCcurrentgain APPLICATIONS ?Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD677

NPNSILICONPOWERDARLINGTONTRANSISTOR

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BD677

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD677

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD675/A-BD677/A-BD679/A-BD681/AareNPNtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. PNPcomplementsareBD676/A-BD678/A-BD680/A-BD682

COMSET

Comset Semiconductor

BD677

PlasticMedium-PowerSiliconNPNDarlingtons

Thisseriesofplastic,medium-powersiliconNPNDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral-purposeamplifierapplications. Features ?HighDCCurrentGain:hFE=750(Min)@Ic=1.5and2.0Adc ?MonolithicConstruction ?BD675.675A,677,677A.679,679A,68

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD677

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD677

NPNPLASTICPOWERDARLINGTONTRANSISTORS

NPNPLASTICPOWERDARLINGTONTRANSISTORS ComplementaryBD676,676A,678,678A,680,680A,682&684

CDIL

Continental Device India Limited

BD677

SiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterBreakdownVoltage— :V(BR)CEO=60V ·DCCurrentGain— :hFE=750(Min)@IC=1.5A ·ComplementtoTypeBD678 APPLICATIONS ·Designedforuseasoutputdevicesincomplementary general-purposeamplifierapplications.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

BD677A

PlasticMedium??owerSiliconNPNDarlingtons

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BD677A

SiliconNPNPowerTransistors

DESCRIPTION ?WithTO-126package ?ComplementtotypeBD676A/678A/680A/682 ?DARLINGTON APPLICATIONS ?Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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更多677B供應(yīng)商 更新時(shí)間2025-4-25 16:27:00

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