PDTC123EEF

Marking：6A；Package：SOT490；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

PEMB18

Marking：6A；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 4.7 k?, R2 = 10 k?

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducespickandplacecosts ?AEC-Q101qualified

PESD2CANFD27U-QC

Marking：6A；Package：DFN1412D-3；ESD protection for In-vehicle networks

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanksdesignedtoprotecttwoautomotiveIn-vehicle networkbuslinesfromthedamagecausedbyElectroStaticdischarge(ESD)andothert

RB168L100DD

Marking：6A；Package：DO-214AA；Schottky Barrier Diode

●Features Highreliability Smallpowermoldtype SuperlowIR ●Application Generalrectification

RF601B2D

Marking：6A；Package：CPD(D-pack)；Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

RF601T2D

Marking：6A；Package：TO-220FN；Fast recovery Diodes (Silicon Epitaxial Planar)

Features 1)UltralowVFveryfastrecovery 2)Fastrecovery 3)Lowswitchingloss 4)StandardpackageTO-220FN,CPD Applications Highfrequencyrectification

1N4006WS

Marking：6A；Package：SOD-323；Surface Mount Glass Passivated Standard Rectifier

BC817-16

Marking：6A；Package：SOT-23；NPN Transistors

BC817-16

Marking：6A；Package：SOT-23；Plastic-Encapsulate Transistors

BC817-ALT1G

Marking：6A；Package：SOT-23；General Purpose Transistors