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ASRD703T

GLASSPACKAGESTEPRECOVERYDIODE

DESCRIPTION: TheASRD700SeriesofStepRecoveryDiodesareDesignedforGeneralPurposeVCOandSamplerApplications. FEATURESINCLUDE: ?TransitionTimeasLowas70pS ?HermeticGlassPackage

ASI

Advanced Semiconductor

B703

XDSLSPLITTERFILTERMODULE

pulse

Pulse A Technitrol Company

BIC703C

BiasControlledMonolithicICVHF/UHFRFAmplifier

Features ?BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. ?High|yfs|;|yfs|=29mStyp.(f=1kHz) ?Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) ?WithstandingtoESD;Buildin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BIC703M

BiasControlledMonolithicICVHF/UHFRFAmplifier

Features ?BiasControlledMonolithicIC(NoexternalDCbiasingvoltageongate1.);Toreduceusingpartscost&PCboardspace. ?High|yfs|;|yfs|=29mStyp.(f=1kHz) ?Lownoise;NF=1.0dBtyp.(atf=200MHz),NF=1.8dBtyp.(atf=900MHz) ?WithstandingtoESD;Buildin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

CEB703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ???????●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB703AL

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP703AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●30V,40A,RDS(ON)=17mΩ@VGS=10V. RDS(ON)=30mΩ@VGS=4.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandingcapability. ●Leadfreeproductisacquired. ???????●TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU703AL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,40A,RDS(ON)=19mΩ@VGS=10V. RDS(ON)=32mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM703ALPAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT40Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

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