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ADM75N06

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM75N06usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

CEB75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,75A,RDS(ON)=13mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEB75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,87A,RDS(ON)=12mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,87A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,75A,RDS(ON)=13mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP75N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,75A,RDS(ON)=13mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP75N06G

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    75N06L

  • 制造商：

    ON Semiconductor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SANYO
2023+
TO-220
8700
原裝現(xiàn)貨
 詢價(jià)
23+
27000
正品原裝貨價(jià)格低
 詢價(jià)
ZX
2023+
TO220F
58000
進(jìn)口原裝,現(xiàn)貨熱賣
 詢價(jià)
VISHAY
2018+
TO263
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
 詢價(jià)
RUICHIPS
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RUHIPS
23+
NA/
447
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
RUICHIPS
24+
TO-263
60000
詢價(jià)
VISHAY
23+
TO-220
3000
全新原裝
 詢價(jià)
臺(tái)灣輝能微
23+
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
INFINEON
TO-247
22+
6000
十年配單,只做原裝
 詢價(jià)
更多75N06L供應(yīng)商 更新時(shí)間2025-4-2 15:00:00

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