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NP80N03DLE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03DLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03DLE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP80N03EDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03EDE

MOSFIELDEFFECTTRANSISTOR

FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03EDE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP80N03ELE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) ?Lowinputcapacitance Ciss=26

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N03ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03ELE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?ChannelTemperature175degreerated ?SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP80N03ELE

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多80N03J供應(yīng)商 更新時(shí)間2025-4-8 11:04:00

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