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NP80N04MHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04MHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04MHE

N-Channel40-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

NP80N04MLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04MLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N04MLG,NP80N04NLG,andNP80N04PLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance -NP80N04MLG,NP80N04NLG RDS(on)1=4.8mΩMAX

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP80N04NHE

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP80N04NHE

MOSFIELDEFFECTTRANSISTOR

SWITCHING CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) ?Lowinputcapacitance Ciss=2200pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
重慶平偉
23+
TO252
50000
全新原裝正品現(xiàn)貨,支持訂貨
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重慶平偉
20+
TO252
10000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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重慶平偉
20+
TO252
10000
進(jìn)口原裝現(xiàn)貨,假一賠十
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重慶平偉
21+
TO252
10000
原裝現(xiàn)貨假一賠十
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17
24+
TO-263
3750
原裝現(xiàn)貨假一賠十
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N
2020+
PG-TO26
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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NEC
SOT-263
22+
6000
十年配單,只做原裝
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NEC
22+
SOT-263
25000
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NEC
25+
SOT-263
12300
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VBSEMI/臺灣微碧
23+
P-TO220-3-1
50000
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更多80N04G供應(yīng)商 更新時(shí)間2025-4-11 9:57:00

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