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RM86N150DF

Marking：86NF；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeature VDS=150V,ID=86A RDS(ON)

RECTRON

Rectron Semiconductor

TLV1861QDBVRQ1

Marking：861Q；Package：SOT-23；TLV185x-Q1 and TLV186x-Q1 Family of 40 V, Nanopower Comparators

1Features ?Qualifiedforautomotiveapplications ?AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto125°C ambientoperatingtemperaturerange –DeviceHBMESDclassificationlevelH1C –DeviceCDMESDclassificationlevelC6 ?Lowsupplycurrent:440n

TI1Texas Instruments

德州儀器

TPCP8601

Marking：8601；Package：PS-13；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8602

Marking：8602；Package：PS-15；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8603

Marking：8603；Package：PS-14；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8605

Marking：8605；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=200to500(VCE=-2V,IC=-0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.27V(max)(IC=-1.6A,IB=-53mA) (3)High-speedswitching:tf=60ns(typ.)(IC=-1.6A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8606

Marking：8606；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(VCE=-2V,IC=-0.4A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.22V(max)(IC=-1.2A,IB=-0.12A) (3)High-speedswitching:tf=35ns(typ.)(IC=-1.2A)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8607

Marking：8607；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications ?High-SpeedSwitching ?DC-DCConverters Features (1)HighDCcurrentgain:hFE=120to240(VCE=-2V,IC=-0.25A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.32V(max)(IC=-0.75A,IB=-75mA) (3)High-speedswitching:tf=65ns(typ.)(IC=-0.75A

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPSM861252RDXR

Marking：861252；Package：QFN-FCMOD；TPSM86125x 3V to 17V Input, 1A, Synchronous Buck Module in QFN Package

1Features ?Configuredforawiderangeofapplications –3Vto17Vwideinputvoltagerange –Fixed3.3VoutputforTPSM861253 –0.6Vto10VoutputrangeforTPSM861252 –0.6Vto5.5VoutputrangeforTPSM861257 –0.6Vreferencevoltage –±1for0.6Vrefaccuracyat25°C –±1.5for0.6Vre

TI1Texas Instruments

德州儀器

TPSM861253RDXR

Marking：861253；Package：QFN-FCMOD；TPSM86125x 3V to 17V Input, 1A, Synchronous Buck Module in QFN Package

1Features ?Configuredforawiderangeofapplications –3Vto17Vwideinputvoltagerange –Fixed3.3VoutputforTPSM861253 –0.6Vto10VoutputrangeforTPSM861252 –0.6Vto5.5VoutputrangeforTPSM861257 –0.6Vreferencevoltage –±1for0.6Vrefaccuracyat25°C –±1.5for0.6Vre

TI1Texas Instruments

德州儀器

替換型號(hào)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    86

  • 制造商：

    Klein Tools, Inc.

  • 類別：

    工具 > 專用工具

  • 包裝：

    散裝

  • 配套使用/相關(guān)產(chǎn)品：

    1986AR

  • 描述：

    POLE CLIMBING GAFFS

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