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FSS9130R

6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs

Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic

Intersil

Intersil Corporation

GFC9130

PChannelPowerMOSFET

GSG

Gunter Seniconductor GmbH.

GM9130HV

3ALEDDriverwithDimmingControl

GAMMA

GAMMA electronics

HDM9130

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無錫市好達(dá)電子股份有限公司

I9130CFI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

I9130CYI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

IRF9130

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

Intersil

Intersil Corporation

IRF9130

TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

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B&K
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NA
44
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24+
7
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NDK
2447
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100500
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8000
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新
4
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35200
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10
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GENERALMICROWAVEISRAEL
24+
30000
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24+
1632
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10000
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