ACE11205A中文資料ACE數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
ACE11205A |
| 功能描述 | P-Channel Enhancement Mode MOSFET |
| 文件大小 |
174.23 Kbytes |
| 頁面數(shù)量 |
3 頁 |
| 生產(chǎn)廠商 | ACE Technology Co., LTD. |
| 企業(yè)簡稱 |
ACE |
| 中文名稱 | ACE Technology Co., LTD.官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-5-23 11:32:00 |
| 人工找貨 | ACE11205A價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
ACE11205A規(guī)格書詳情
Description
The ACE11205A is the P-Channel enhancement mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high-density process is especially tailored to minimize
on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power
management and other battery powered circuits where high-side switching, low in-line power loss, and
resistance to transients are needed.
Features
? -20V/0.45A, RDS(ON)= 520mΩ@VGS=-4.5V
-20V/0.35A, RDS(ON)= 700mΩ@VGS=-2.5V
-20V/0.25A, RDS(ON)= 1500mΩ@VGS=-1.8V
? Super high-density cell design for extremely low RDS (ON)
? Exceptional on-resistance and maximum DC current capability
Application
? Drivers: Relays/Solenoids/Lamps/Hammers
? Power Supply Converter Circuits
? Load/Power Switching Cell Phones, Pagers
