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AD8351-EVAL

Low Distortion Differential RF/IF Amplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351-EVAL

Low Distortion Differential RF/IF Amplifier

GENERALDESCRIPTION TheAD8351isalowcostdifferentialamplifierusefulinRFandIFapplicationsupto2.2GHz.Thevoltagegaincanbesetfromunityto26dBusingasingleexternalgainresistor.TheAD8351providesanominal150Ωdifferentialoutputimpedance.Theexcellentdistortionpe

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351-EVALZ

Low Distortion Differential RF/IF Amplifier

FEATURES?3dBbandwidthof2.2GHzforAV=12dBSingleresistorprogrammablegain:0dB≤AV≤26dBDifferentialinterfaceLownoiseinputstage2.7nV/√HzatAV=10dBLowharmonicdistortion ?79dBcsecondat70MHz ?81dBcthirdat70MHzOIP3of31dBmat70MHzSingle-supplyoperation:

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

AD8351-EVALZ

包裝：盒 類(lèi)別：開(kāi)發(fā)板，套件，編程器 射頻評(píng)估和開(kāi)發(fā)套件，開(kāi)發(fā)板 描述：BOARD EVAL FOR AD8351

ADAnalog Devices

亞德諾亞德諾半導(dǎo)體技術(shù)有限公司

DRV8351DIMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

DRV8351DMPWTSEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

DRV8351-SEP

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

DRV8351-SEPD

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

DRV8351-SEPDI

DRV8351-SEP:40-VThree-PhaseBLDCGateDriver

1Features ?40VThreePhaseHalf-BridgeGatedriver –DrivesN-ChannelMOSFETs(NMOS) –GateDriverSupply(GVDD):5-15V –MOSFETsupply(SHx)supportsupto40V ?TargetRadiationPerformance –SEL,SEB,andSETimmuneuptoLET=43 MeV-cm2/mg –SETandSEFIcharacterizeduptoLET=4

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ESD8351

ESDProtectionDiodesLowCapacitanceESDProtectionDiodeforHighSpeedDataLine

TheESD8351SeriesESDprotectiondiodesaredesignedtoprotect highspeeddatalinesfromESD.Ultra?lowcapacitanceandlowESD clampingvoltagemakethisdeviceanidealsolutionforprotecting voltagesensitivehighspeeddatalines. Features ?LowCapacitance(0.55pFMax,I/OtoGND)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AD8351-EVAL

  • 制造商：

    Analog Devices

  • 功能描述：

    MINISO IF SAMPLING ADC DRIVER - Bulk

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AD
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19960
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13880
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66900
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20+
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33680
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ADI
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55
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AD
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2
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20000
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ADI
22+
N/A
60000
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24+
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10000
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Analog Devices
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更多AD8351-EVAL供應(yīng)商 更新時(shí)間2025-2-12 16:06:00

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