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IRF9610

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-1.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF9610PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610PBF

HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.8A)

IRF

International Rectifier

IRF9610PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610S

AvailableinTapeandReel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610S

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.8A)

Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Surface

IRF

International Rectifier

IRF9610S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610SPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610STRLPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9610STRRPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    AD9610

  • 制造商:

    AD

  • 制造商全稱(chēng):

    Analog Devices

  • 功能描述:

    Wide Bandwidth, Fast Settling Operational Amplifier

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AD
23+
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19960
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AD
23+
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9827
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AD
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19889
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ADC
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6526
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AD
24+
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67
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2500
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AD
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6980
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ADI
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527
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更多AD9610供應(yīng)商 更新時(shí)間2025-4-24 8:01:00