ADRF5032BCCZN-R7中文資料亞德諾數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The ADRF5032 is a reflective, single-pole double-throw (SPDT)

switch manufactured using the silicon process. The ADRF5032

operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0

dB and isolation of higher than 32 dB. The device has a RF input

power handling capability of 24 dBm for both through paths and 21

dBm for hot switching.

The ADRF5032 requires dual supply voltages of ±3.3 V. The device

employs CMOS and low-voltage transistor logic (LVTTL) compatible

control.

The ADRF5032 is packaged in a 12-terminal, 2.5 mm × 2.5 mm,

RoHS-compliant, land grid array (LGA). The ADRF5032 operates

from ?40°C to +105°C.

FEATURES

? Ultra-wideband frequency range: 1 GHz to 60 GHz

? Reflective design

? Low insertion loss

? 1.3 dB typical up to 40 GHz

? 1.9 dB typical up to 55 GHz

? 2.0 dB typical up to 60 GHz

? High isolation

? 43 dB typical up to 40 GHz

? 37 dB typical up to 55 GHz

? 32 dB typical up to 60 GHz

? High input linearity

? P0.1dB: 24 dBm typical

? IP3: 45 dBm typical

? High-RF power handling

? Through path: 24 dBm

? Hot switching path: 21 dBm

? CMOS/LVTTL compatible

? No low-frequency spur

? RF switching time: 15 ns

? RF settling time (50 VCTRL to 0.1 dB of RF output): 35 ns

? Dual-supply operation: ±3.3 V

? 12-terminal, 2.5 mm × 2.5 mm, RoHS-compliant, LGA package

APPLICATIONS

? Industrial scanners

? Test and instrumentation

? Cellular infrastructure: 5G mmWave

? Military radios, radars, electronic counter measures (ECMs)

? Microwave radios and very small aperture terminals (VSATs)