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AORN1002FTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002FUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

APT1002RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1002RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1002RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1002RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1002RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT1002RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ARJ-1002

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

ASI1002

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBminat2W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

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24+
BGA
540010
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2016+
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6000
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24+
SSOP20
2650
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AIPROS
23+
TSSOP20
8560
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20000
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2022+
2357
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更多AI1002供應(yīng)商 更新時間2025-4-24 17:06:00

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