ALD1106_V01中文資料ALD數據手冊PDF規(guī)格書

GENERAL DESCRIPTION

The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement

mode matched MOSFET transistor arrays intended for a broad range

of precision analog applications. The ALD1106/ALD1116 offer high input

impedance and negative current temperature coefficient. The transistor

pairs are matched for minimum offset voltage and differential thermal

response, and they are designed for precision analog switching and

amplifying applications in +2V to +12V systems where low input bias

current, low input capacitance and fast switching speed are desired. These

MOSFET devices feature very large (almost infinite) current gain in a low

frequency, or near DC, operating environment. The ALD1106/ALD1116

are building blocks for differential amplifier input stages, transmission

gates, and multiplexer applications, current sources and many precision

analog circuits.

FEATURES

? Low threshold voltage of 0.7V

? Low input capacitance

? Low Vos 2mV typical

? High input impedance -- 1014Ω typical

? Negative current (IDS) temperature coefficient

? Enhancement-mode (normally off)

? DC current gain 109

? Low input and output leakage currents

? RoHS compliant

APPLICATIONS

? Precision current mirrors

? Precision current sources

? Voltage choppers

? Differential amplifier input stage

? Voltage comparator

? Data converters

? Sample and Hold

? Analog signal processing