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AM1011-300

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-300isarugged,ClassCcommonbasedevicespecificallydesignedfornewModeSinterrogatorandtransponderapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTING ■LOWRFTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGEOMETRY ■METAL/CERAMIC

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM1011-400

L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

DESCRIPTION TheAM1011-400deviceisahighpowerClassCtransistorspecificallydesignedforTCASandMode-Spulsedoutputanddriverapplications. ■REFRACTORY/GOLDMETALLIZATION ■EMITTERSITEBALLASTED ■15:1VSWRCAPABILITY ■LOWTHERMALRESISTANCE ■INPUT/OUTPUTMATCHING ■OVERLAYGE

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM1011-500

NPN RF POWER TRANSISTOR

DESCRIPTION: TheASIAM1011-500isaCommonBaseDeviceDesignedforPulsedL-BandRadarAmplifierApplications. FEATURESINCLUDE: ?Input/OutputMatching ?GoldMetallization ?HermeticMetal/CeramicPackage

ASI

Advanced Semiconductor

AM1011-500

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

DESCRIPTION TheAM1011-500deviceisahighpowerClassCtransistorspecificallydesignedforL-BandAvionicapplicationsinvolvinghighpulseburstdutycycles. ■POUT=500WMIN.WITH8.5dBMIN.GAIN ■10:1LOADVSWRCAPABILITY@10μS.,1DUTY ■SIXPAC?HERMETICMETAL/CERAMICPACKAGE ■E

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

AM1012

MOSFET N-CHANNEL 1.8-V (G-S) MOSFET

FEATURES TrenchFETPowerMOSFET:1.8-VRated Gate-SourceESDProtected:2000V High-SideSwitching LowOn-Resistance:0.7Ω LowThreshold:0.8V(typ) FastSwitchingSpeed:10ns AvailableinSC-89Package DESCRIPTIONFEATURES TheAM1012isavailableinSC-89Package APPLICATION ?Drive

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM1013

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=20V VGS=6V ID(A)=350mA RDS(ON)=0.8Ω@VGS=-4.5V RDS(ON)=1.2Ω@VGS=-2.5V RDS(ON)=1.8Ω@VGS=-1.8V TheAM 1013isavailableinSC-89package FEATURES ?Gate-SourceESDProtected:2kV ?High-SideSwitching ?LowOn-Resistance:1.2Ω ?LowThreshold:0.8V(typ) ?

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM1013CK3R

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=20V VGS=6V ID(A)=350mA RDS(ON)=0.8Ω@VGS=-4.5V RDS(ON)=1.2Ω@VGS=-2.5V RDS(ON)=1.8Ω@VGS=-1.8V TheAM 1013isavailableinSC-89package FEATURES ?Gate-SourceESDProtected:2kV ?High-SideSwitching ?LowOn-Resistance:1.2Ω ?LowThreshold:0.8V(typ) ?

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM1013CK3VR

MOSFET 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=20V VGS=6V ID(A)=350mA RDS(ON)=0.8Ω@VGS=-4.5V RDS(ON)=1.2Ω@VGS=-2.5V RDS(ON)=1.8Ω@VGS=-1.8V TheAM 1013isavailableinSC-89package FEATURES ?Gate-SourceESDProtected:2kV ?High-SideSwitching ?LowOn-Resistance:1.2Ω ?LowThreshold:0.8V(typ) ?

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

AM1016A

One Channel H-Bridge Motor Driver

FeaturesandBenefits ?WideSupplyVoltageRange(2.0V~6.8V) ?0.9AContinuousCurrent,2APeakCurrent ?LowStandbyModeCurrent(Typ=0.01μA) ?LowQuiescentOperationCurrent ?LowMOSFETsOn-resistance0.6?@Io=0.2A; 0.65?@Io=0.6A ?ProvideFourOperationModes: Forward/Reverse/Stop

AMTEKAMtek SEMICONDUCTORS CO., LTD

晶致半導(dǎo)體晶致半導(dǎo)體股份有限公司

AM101-G

Silicon Miniature Single-Phase Bridge

Features: ?Ratingsto1000VPRV ?Surgeoverloadrating-30/50amperespeak ?Idealforprintedcircuitedboard ?Reliableconstructionutilizingmoldedplastic ?Mountingposition:Any

COMCHIPComchip Technology

典琦典琦科技股份有限公司

詳細(xì)參數(shù)

  • 型號：

    AM101

  • 功能描述：

    標(biāo)準(zhǔn)LED-SMD Amber

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 封裝/箱體：

    0402 LED

  • 大小：

    1 mm x 0.5 mm x 0.35 mm

  • 照明顏色：

    Red

  • 波長/色溫：

    631 nm

  • 透鏡顏色/類型：

    Water Clear

  • 正向電流：

    30 mA

  • 正向電壓：

    2 V

  • 光強(qiáng)度：

    54 mcd

  • 顯示角：

    130 deg

  • 系列：

    VLMx1500

  • 封裝：

    Reel

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