AM29LV400BB70RWAI中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

GENERAL DESCRIPTION

The Am29LV400B is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors

■ Manufactured on 0.35 μm process technology

— Compatible with 0.5 μm Am29LV400 device

■ High performance

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast

as 70 ns

■ Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

seven 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

seven 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when

issuing multiple program command sequences

■ Top or bottom boot block configurations

available

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per

sector

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data