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AM29LV800T

8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV800T-100

8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV800T-120

8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV800T-150

8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV800T-90R

8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AS29LV800

3V1M?8/512K?16CMOSFlashEEPROM

Functionaldescription TheAS29LV800isan8megabit,3.0voltFlashmemoryorganizedas1Megabyteof8bits/512Kbytesof16bitseach.Forflexibleeraseandprogramcapability,the8megabitsofdataisdividedintonineteensectors:one16K,two8K,one32K,andfifteen64kbytesectors;or

ANADIGICS

ANADIGICS, Inc

EN29LV800

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800isan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin10μs.TheEN29LV800features3.0Vvoltagereadandwriteoperation,withaccesstimesasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800A

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV800Aisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Afeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas5

EON

Eon Silicon Solution Inc.

EN29LV800B

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

EON

Eon Silicon Solution Inc.

EN29LV800C

8Megabit(1024Kx8-bit/512Kx16-bit)FlashMemory

GENERALDESCRIPTION TheEN29LV800Cisan8-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas1,048,576bytesor524,288words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV800Cfeatures3.0Vvoltagereadandwriteoperation,withaccesstimeasfastas7

EON

Eon Silicon Solution Inc.

詳細參數(shù)

  • 型號:

    AM29LV800T

  • 制造商:

    Spansion

  • 功能描述:

    3V 8M FLASH KNWON GOOD DIE W/TOP BOOT(COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film

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