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AOP610

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOP610L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAOP610usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedtoformalevelshiftedhighsideswitch,andforahostofotherapplications.ASchottkydiodeinparallelwiththen-channelFETredu

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AQW610EH

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EH

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHA

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EHA

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHAX

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EHAX

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

AQW610EHAZ

PhotoMOSRELAYS

PhotoMOSRELAYS FEATURES 1.Reinforcedinsulation5,000Vtype Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 2.Compact8-pinDIPsize Thedevicecomesinacompact(W)6.4×(L)9.86×(H)3.2mm(W

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQW610EHAZ

BothNOandNCcontactsincorporatedinacompactDIP8-pinReinforcedinsulation

FEATURES 1.60Vtypecoupleshighcapacity(0.5A)withlowon-resistance(typ.1?). 2.Reinforcedinsulation5,000V Morethan0.4mminternalinsulationdistancebetweeninputsandoutputs.ConformstoEN41003,EN60950(reinforcedinsulation). 3.Aprrox.1/2thespacecomparedwithth

PanasonicPanasonic Semiconductor

松下松下電器

詳細參數(shù)

  • 型號：

    AN610P

  • 功能描述：

    RF Modulator/Demodulator

供應商型號品牌批號封裝庫存備注價格
MAT
24+
100
詢價
MIT
22+
DIP
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
Panasonic
23+
DIP
3880
正品原裝貨價格低
 詢價
MAXIM
23+
NA
25060
只做進口原裝,終端工廠免費送樣
 詢價
PANASANT
24+
SIP
5650
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
MAT
23+
ZIP
5177
現(xiàn)貨
 詢價
panasonic
23+
QFP
5000
原裝正品,假一罰十
 詢價
PANASONIC/松下
23+
QFP
5000
原廠授權代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
 詢價
Panasinic
25+
QFP
5000
強調(diào)現(xiàn)貨,隨時查詢!
 詢價
PANASONIC
24+
QFP
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
更多AN610P供應商 更新時間2025-4-5 16:30:00

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