| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SingleP-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?LowOn-Resistance ?1.8Vdr | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SingleP-ChannelPowerMOSFET ThisPowerMOSFETisproducedusingONSemiconductor’strenchtechnology,whichisspecificallydesignedtominimizegatechargeandlowonresistance.Thisdeviceissuitableforapplicationswithlowgatechargedrivingorlowonresistancerequirements. Features ?LowOn-Resistance ?1.8Vdr | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
77-Channel(550MHz)CATVAmplifier TheRFLine 77-Channel(550MHz)CATVAmplifier ...designedspecificallyfor550MHzCATVapplications.Featuresion–implantedarsenicemittertransistorswith7GHzfTandanallgoldmetallizationsystem. ?Specifiedfor77–ChannelPerformance ?BroadbandPowerGain-@f=40–550MHz | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
CATVAmplifierModule Features ?Specifiedfor77-ChannelLoading ?ExcellentDistortionPerformance ?SuperiorGain,ReturnLossandDCCurrentStabilityoverTemperature ?SiliconBipolarTransistorTechnology ?UnconditionallyStableUnderAllLoadConditions Applications ?CATVSystemsOperatinginthe40 | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
CATVAmplifierModule Description ?24VdcSupply,40to550MHz,CATVForwardAmplifierModule ?ReplacedMHW6342T.Therearenoform,fitorfunctionchangeswiththispartreplacement. ?RoHSCompliant Features ?Specifiedfor77-ChannelLoading ?ExcellentDistortionPerformance ?SuperiorGain,ReturnLoss | freescaleFreescale Semiconductor, Inc 飛思卡爾飛思卡爾半導(dǎo)體 | freescale | ||
TRI-STATEBUFFER | NJRCNew Japan Radio 新日本無線株式會(huì)社 | NJRC | ||
TRI-STATEBUFFER | NJRCNew Japan Radio 新日本無線株式會(huì)社 | NJRC | ||
TRI-STATEBUFFER | NJRCNew Japan Radio 新日本無線株式會(huì)社 | NJRC | ||
1310nmAlGaInAsMQW-DFBLASERDIODEFOR10Gb/sBASE-LR/LWAPPLICATION | CEL California Eastern Labs | CEL | ||
LASERDIODE1310nmAlGaInAsMQW-DFBLASERDIODEFOR10Gb/sBASE-LR/LWAPPLICATION DESCRIPTION TheNX6342EPisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodewithInGaAsmonitorPIN-PD. FEATURES ?OpticaloutputpowerPO=8.5mW ?LowthresholdcurrentIth=8mA ?Differentialefficiencyηd=0.23W/A ?Wideoperatingtemperatur | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
替換型號
詳細(xì)參數(shù)
- 型號：
AN6342
- 功能描述：
VTR REFERENCE FREQUENCY DIVIDER
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