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BF904

N-channeldualgateMOS-FETs

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904A

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904A

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904A

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF904AWR

N-channeldualgateMOS-FETs

DESCRIPTION Enhancementtypefield-effecttransistors.ThetransistorsconsistofanamplifierMOS-FETwithsourceandsubstrateinterconnectedandaninternalbiascircuittoensuregoodcross-modulationperformanceduringAGC. TheBF904A,BF904ARandBF904AWRareencapsulatedintheSOT143B,S

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF904AWR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AN904

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱(chēng)：

    STMicroelectronics

  • 功能描述：

    MAGNETIC AMPLIFIER WITH LPR30 CONTROLLER

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DIP
69
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PAN
23+
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5177
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Panasoni
23+
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3880
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8200
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CAN10
50000
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MAT
23+
DIP18
5000
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ZIP
5000
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24+
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2987
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更多AN904供應(yīng)商 更新時(shí)間2025-4-3 16:30:00

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