首頁 >AOB4S60>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

AOB4S60

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

AOB4S60

Marking:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=4A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOB4S60

600V 4A a MOS Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOB4S60

600V 4A a MOS TM Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOB4S60L

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

AOB4S60L

600V 4A a MOS TM Power Transistor

GeneralDescription TheAOT4S60&AOB4S60&AOTF4S60havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchec

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOD4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

AOD4S60

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES ?DrainCurrent–ID=4A@TC=25℃ ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max) ?100avalanchetested ?MinimumLot-to-Lot

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOI4S60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

AOI4S60

600V4AaMOSPowerTransistor

AOSMDAlpha & Omega Semiconductors

萬國半導體美國萬國半導體

詳細參數(shù)

  • 型號:

    AOB4S60

  • 功能描述:

    MOSFET N-CH 600V 4A D2PAK

  • RoHS:

  • 類別:

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列:

    aMOS™

  • 標準包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應商設備封裝:

    TO-220FP

  • 包裝:

    管件

供應商型號品牌批號封裝庫存備注價格
AOS/萬代
24+
TO-263
333888
專業(yè)直銷原裝AOS一系列可訂貨
詢價
AOS/萬代
24+
TO-263
498676
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
AOS萬代
20+
TO-263
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
AOS
2020+
TO-263
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
AOS/萬代
23+
TO-263
24190
原裝正品代理渠道價格優(yōu)勢
詢價
ALPHA
22+
SOT-263
20000
保證原裝正品,假一陪十
詢價
AOS/萬代
21+
TO-263
30000
優(yōu)勢供應 實單必成 可13點增值稅
詢價
AOS
21+
TO-263
951
原裝現(xiàn)貨假一賠十
詢價
AOS/萬代
23+
TO-263
10000
公司只做原裝正品
詢價
AOS/萬代
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多AOB4S60供應商 更新時間2025-2-19 10:00:00