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AQY414EH

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EH

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414EHA

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EHA

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414EHAX

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EHAX

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414EHAZ

GU(GeneralUse)-EType1-Channel(FormB)4-pinType

FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. Crosssectionofthenormally-closedtypeofpowerMOS 2.Reinforcedinsulation5,000Vty

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

AQY414EHAZ

NormallyclosedDIP4-pineconomictypewithreinforcedinsulationModem

FEATURES 1.Highcost-performancetypeof PhotoMOS1FormBoutput 2.Lowon-resistance Thishasbeenrealizedthankstothe built-inMOSFETprocessedbyour proprietarymethod,DSD(Double diffusedandSelectiveDoping)method. 3.Reinforcedinsulationof5,000V Moret

PanasonicPanasonic Semiconductor

松下松下電器

AQY414S

HIGHVOLTAGE,PHOTOMOSRELAY

[CLOBALcomponents&controls] DESCRIPTION TheAQY414Sisasinglepolesinglethrow(SPST),normallyclose(NC),MosRelay.therelaycancontrolAcorDCloadscurrentsupto130mA,withasupplyvoltageupto400V.Thedeviceispackagedina4pinSopackage.Thispackageoffersanins

ETCList of Unclassifed Manufacturers

未分類制造商

AQY414SX

GU(GeneralUse)TypeSOPSeries1-Channel(FormB)4-PinType

NAISNais(Matsushita Electric Works)

松下電器松下電器機電(中國)有限公司

詳細(xì)參數(shù)

  • 型號：

    AOU414

  • 制造商：

    AOSMD

  • 制造商全稱：

    Alpha & Omega Semiconductors

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
AO
2020+
TO-251
4500
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
AO
19+
TO-251
63520
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
AO
22+
DIP-8
8200
原裝現(xiàn)貨庫存.價格優(yōu)勢!!
 詢價
A
2020+
TO-251
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
AO
24+
TO-251
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
AOSMD
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣
 詢價
AOS/萬代
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
A
22+
TO-251
6000
十年配單,只做原裝
 詢價
A
23+
TO-251
6000
原裝正品，支持實單
 詢價
VBsemi
21+
TO251
10065
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多AOU414供應(yīng)商 更新時間2025-4-7 11:15:00

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