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BB302C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi Semiconductor

日立日立公司

BB302M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB302MBW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.7dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto240VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BC302

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC302

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

BC302

BipolarNPNDeviceinaHermeticallysealedTO39

SEME-LAB

Seme LAB

BC302

NPNEPITAXIALPLANARSILICONTRANSISTORS

NPNEPITAXIALPLANARSILICONTRANSISTORS NPNSILICONLOW-AND-MEDIUMPOWERTRANSISTORS.

CDIL

Continental Device India Limited

BC302

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BD302

iscSiliconPNPPowerTransistor

DESCRIPTION ?DCCurrentGain-:hFE=30(Min.)@IC=-3A ?Collector-EmitterBreakdownVoltage-:V(BR)CEO=-45V(Min.) ?ComplementtoTypeBD301 APPLICATIONS ?Designedforaudiooutputstagesupto25W,verticaldeflectioncircuitsincolorTVreceivers.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
BCD
2015+
TSOT23-6
28989
專業(yè)代理原裝現(xiàn)貨,特價熱賣!
 詢價
BCDSEMI
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
BCD
24+
SOT-23-6
393428
背光IC原裝現(xiàn)貨熱賣中
 詢價
Hammond
2020+
N/A
155
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
Hammond
22+
NA
155
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
AP
23+
SOT23-6
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
AP
24+
NA/
5850
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
Diodes
22+
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
13880
公司只售原裝,支持實單
 詢價
DIODES
24+
20000
全新、原裝、現(xiàn)貨
 詢價
更多AP302W供應(yīng)商 更新時間2025-4-24 9:00:00

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