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ISPP08N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N80C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N80C3

CoolMOSTMPowerTransistorFeaturesExtremedv/dtratedHighpeakcurrentcapability

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPI08N80C3

iscN-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP08N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP08N80C3

N-ChannelMOSFETTransistor

?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.65? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP08N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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TO262
28888
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ACBEL
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411
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86
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module
8324
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2176
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ASTEC
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NA
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API
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更多API08N80C3供應(yīng)商 更新時(shí)間2025-2-14 15:11:00

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