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APT5010B2LC

Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs

POWERMOSVI? PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliver

ADPOW

Advanced Power Technology

APT5010B2LC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

APT5010B2LL

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT5010B2LL

POWERMOS7MOSFET

POWERMOS7?MOSFET PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalon

ADPOW

Advanced Power Technology

APT5010B2LL

PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.

POWERMOS7? PowerMOS7TMisanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7TMbysignificantlyloweringRDS(ON)andQg.PowerMOS7TMcombineslowerconductionandswitchinglossesalongwit

ADPOW

Advanced Power Technology

APT5010B2LL

PowerMOS7isanewgenerationoflowloss,highvoltage,N-Channel

POWERMOS7?MOSFET PowerMOS7?isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7?bysignificantlyloweringRDS(ON)andQg.PowerMOS7?combineslowerconductionandswitchinglossesalon

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT5010B2VFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

APT5010B2VR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=47A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT5010B2VR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching

ADPOW

Advanced Power Technology

APT5010B2VR

NewT-MAX??Package(Clip-mountedTO-247Package)

ADPOW

Advanced Power Technology

詳細(xì)參數(shù)

  • 型號：

    APT5010B2LC

  • 制造商：

    ADPOW

  • 制造商全稱：

    Advanced Power Technology

  • 功能描述：

    Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
APT
24+
8866
詢價(jià)
APT
22+
原廠原封
8200
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢!!
 詢價(jià)
APT
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
 詢價(jià)
ADPOW
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
APT
2015
模塊
300
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價(jià)
APT
23+
TO-247
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
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APT
23+
TO-247
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
APT
24+
TO-247
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
 詢價(jià)
APT
TO-247Max
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
APTMICROSEMI
1822+
TO-247
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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更多APT5010B2LC供應(yīng)商 更新時(shí)間2025-2-6 16:30:00

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