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APT8030JN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT8030JN

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=27A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·ACandDCMotorDrives ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030JVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

ADPOW

Advanced Power Technology

APT8030LVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT8030LVFR

POWERMOSV

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

APT8030LVFR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT8030LVFRG

POWERMOSV

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號(hào)：

    APT8030FN

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 29A I(D) | F-PACK SIP

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更多APT8030FN供應(yīng)商 更新時(shí)間2025-2-12 15:57:00

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