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AS28C010CW-12SLASH883C中文資料AUSTIN數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
AS28C010CW-12SLASH883C |
| 功能描述 | 128K x 8 EEPROM EEPROM Memory 5 Volt, Byte Alterable |
| 文件大小 |
306.46 Kbytes |
| 頁(yè)面數(shù)量 |
14 頁(yè) |
| 生產(chǎn)廠商 | Austin Semiconductor |
| 企業(yè)簡(jiǎn)稱 |
AUSTIN |
| 中文名稱 | Austin Semiconductor官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-5-8 16:10:00 |
| 人工找貨 | AS28C010CW-12SLASH883C價(jià)格和庫(kù)存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
AS28C010CW-12SLASH883C規(guī)格書詳情
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability.
FEATURES
? Access speed: 120, 150, 200, and 250ns
? Data Retention: 100 Years
? Low power, active current: 50mA, standby current: 500uA
? Single +5V (+10%) power supply
? Data Polling and Toggle
? Erase/Write Endurance (10,000 byte mode / 100,000 page mode)
? Software Data protection Algorithm
? Automatic , Self-Timed Byte Write
? Automatic Programming: Automatic Page Write: 10ms (MAX)
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