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AS4C1M16E5-45JC

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-45TC

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-50JC

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-50JI

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-50TC

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-50TI

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-60JC

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-60JI

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-60TC

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

AS4C1M16E5-60TI

5V 1M?16 CMOS DRAM (EDO)

Functionaldescription TheAS4C1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspeed,extremelylowpowerandwideop

ALSC

Alliance Semiconductor Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號:

    AS4

  • 制造商:

    Altech Corporation

  • 類別:

    連接器,互連器件 > DIN 導(dǎo)軌,通道

  • 系列:

    AS

  • 包裝:

    散裝

  • 類型:

    饋通式

  • 層級數(shù):

    1

  • 端子 - 寬度:

    6.0mm

  • 端接樣式:

    推入式,彈簧

  • 電壓 - IEC:

    800V

  • 電壓 - UL:

    600V

  • 線規(guī)或范圍 - AWG:

    10-22AWG

  • 線規(guī)或范圍 -?mm2:

    0.2-4mm2

  • 顏色:

    灰色

  • 描述:

    SPRING CLAMP 35A600V22-10AWG6MM

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更多AS4供應(yīng)商 更新時間2025-4-22 17:00:00