AS5SS256K18DQ-9SLASHIT中文資料AUSTIN數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. Synchronous Burst SRAM family employs high-speed, low power CMOS designs that are fabricated using an advanced CMOS process.

FEATURES

? Fast access times: 8, 10, and 15ns

? Fast clock speed: 113, 100, and 66 MHz

? Fast clock and OE access times

? Single +3.3V +0.3V/-0.165V power supply (VDD)

? SNOOZE MODE for reduced-power standby

? Common data inputs and data outputs

? Individual BYTE WRTIE control and GLOBAL WRITE

? Three chip enables for simple depth expansion and address pipelining

? Clock-controlled and registered addresses, data I/Os and control signals

? Interally self-timed WRITE cycle

? Burst control pin (interleaved or linear burst)

? Automatic power-down

? Low capacitive bus loading

? Operating Temperature Ranges:

- Military -55°C to +125°C

- Industrial -40°C to +85°C