AT-635TR

Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz

AT-635TR

Voltage Variable Absorptive Attenuator 35 dB, DC - 2.0 GHz

AT-635TR

Voltage Variable Absorptive Attenuator 35 dB, DC-2.0 GHz

ATS635LSE

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

ATS635LSETN-T

ProgrammableBackBiasedHall-EffectSwitchwithTPOSFunctionality

FEATURES ChopperStabilization Extremelylowswitch-pointdriftovertemperature On-chipProtection Supplytransientprotection Outputshort-circuitprotection Reverse-batteryprotection TrueZero-SpeedOperation TruePower-OnState Single-chipSensingICforHighReliability O

AXLGS635F

Langasite(LGS)SMDCrystalResonatorUnit

BB635-PE-XX-G-TR

BOARDTOBOARDSOCKET

BC635

NPNEPITAXIALSILICONTRANSISTOR

SwitchingandAmplifierApplications ?ComplementtoBC636/638/640

BC635

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrent)

NPNSiliconAFTransistors ●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC636,BC638,BC640(PNP)

BC635

NPNmediumpowertransistors

DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage. PNPcomplements:BC636,BC638andBC640. FEATURES ?Highcurrent(max.1A) ?Lowvoltage(max.80V). APPLICATIONS ?Driverstagesofaudio/videoamplifiers.