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ATF22V10B-25SI

HighperformanceEEPLD

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

ATF22V10B-25SI

High-PerformanceEEPLD

Description TheAtmel?ATF22V10Bisahigh-performanceCMOS(electricallyerasable)programmablelogicdevice(PLD)whichutilizestheAtmelprovenelectricallyerasableFlashmemorytechnology.Speedsdownto7.5nsandpowerdissipationaslowas10mAareoffered.Allspeedrangesarespecified

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

ATF22V10B-25XC

HighperformanceEEPLD

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

ATF22V10B-25XC

High-PerformanceEEPLD

Description TheAtmel?ATF22V10Bisahigh-performanceCMOS(electricallyerasable)programmablelogicdevice(PLD)whichutilizestheAtmelprovenelectricallyerasableFlashmemorytechnology.Speedsdownto7.5nsandpowerdissipationaslowas10mAareoffered.Allspeedrangesarespecified

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

ATF22V10B-25XI

HighperformanceEEPLD

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

ATF22V10B-25XI

High-PerformanceEEPLD

Description TheAtmel?ATF22V10Bisahigh-performanceCMOS(electricallyerasable)programmablelogicdevice(PLD)whichutilizestheAtmelprovenelectricallyerasableFlashmemorytechnology.Speedsdownto7.5nsandpowerdissipationaslowas10mAareoffered.Allspeedrangesarespecified

AtmelAtmel Corporation

愛特梅爾愛特梅爾公司

GAL22V10B-25LJ

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LJI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LP

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

GAL22V10B-25LPI

HighPerformanceE2CMOSPLDGenericArrayLogic

Description TheGAL22V10,at4nsmaximumpropagationdelaytime,combinesahighperformanceCMOSprocesswithElectricallyErasable(E2)floatinggatetechnologytoprovidethehighestperformanceavailableofany22V10deviceonthemarket.CMOScircuitryallowstheGAL22V10toconsumemuchles

LatticeLattice Semiconductor

萊迪思萊迪思半導(dǎo)體公司

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24+
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100
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ATMEL
22+
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8200
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AT
23+
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4800
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ATMEL
2023+環(huán)?,F(xiàn)貨
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1850
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ATMEL
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原廠原包
19960
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ATMEL
23+
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5177
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ATMEL
24+
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3500
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ATMEL
2023+
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50000
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ATMEL
22+
CDIP
8000
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24+
DIP
200
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更多AT22V10B-25SC供應(yīng)商 更新時(shí)間2025-3-12 16:30:00