AT29C432-12中文資料愛特梅爾數(shù)據(jù)手冊PDF規(guī)格書

Description

The AT29C432 is a CMOS memory specifically designed for applications requiring both a high density nonvolatile program memory and a smaller nonvolatile data memory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated with a 256K bit full featured E2PROM array on the same device. A unique feature of this device is its concurrent read while writing capability. This provides the host system read access to the Flash program memory during the write cycle time of the E2PROM.

Features

? ConcurrentFlash? Memory

Unique Architecture Allows the Flash Array

To Be Read During the E2PROM Write Cycle

? 4 Megabit 5-volt Flash

Configured as a 512K x 8 Memory Array

120 ns Read Access Time

Sector Program Operation

Single Cycle Reprogram (No Erase Necessary)

2048 Sectors, 256-Bytes Wide

10 ms Sector Rewrite

JEDEC Standard Software Data Protection

? 256K bit Full Feature E2PROM

Configured as a 32K x 8 Memory Array

Byte or Page (16 bytes) Write Capability

Write Cycle Time: 10 ms

JEDEC Standard Software Data Protection

? Pinout Similar to 32-Pin 4 Mb Flash

? Data Memory Endurance: 10,000 cycles