AT49BV1614T-12CI中文資料愛特梅爾數據手冊PDF規(guī)格書

Description

The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball μBGA packages.

Features

? 2.7V to 3.3V Read/Write

? Access Time - 90 ns

? Sector Erase Architecture

– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

– Two 16K Word (32K Byte) Sectors with Individual Write Lockout

? Fast Word Program Time - 20 μs

? Fast Sector Erase Time - 200 ms

? Dual Plane Organization, Permitting Concurrent Read while Program/Erase

Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors

Memory Plane B: Twenty-four 32K Word Sectors

? Erase Suspend Capability

– Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector

? Low-power Operation

– 25 mA Active

– 10 μA Standby

? Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

? Optional VPP Pin for Fast Programming

? RESET Input for Device Initialization

? Sector Program Unlock Command

? TSOP, CBGA, and μBGA Package Options

? Top or Bottom Boot Block Configuration Available