ATC100B101JT500XT

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500MHz,600W,50VLATERALN--CHANNELBROADBANDRFPOWERMOSFET Designedprimarilyforwidebandapplicationswithfrequenciesupto500MHz.Deviceisunmatchedandissuitableforuseinbroadcastapplications. ?TypicalDVB--TOFDMPerformance:VDD=50Volts,IDQ=2600mA,Pout=125Wa

ATC100B101JT500XT

RF Power Field Effect Transistors

N--ChannelEnhancement--ModeLateralMOSFETs DesignedforCDMAbasestationapplicationswithfrequenciesfrom1805to 1880MHz.SuitableforCDMAandmulticarrieramplifierapplications.Tobe usedinClassABandClassCforPCN--PCS/cellularradioandWLL applications. ?TypicalSingle--Ca

ATC100B101JT500XT

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

ATC100B101JT500XT

RF Power Field Effect Transistor

ATC100B101JT500XT

RF Power Field Effect Transistors

ATC100B101JT500XT

RF Power LDMOS Transistors

ATC100B101JT500XT

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs