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BAV301

SwitchingDiode

Features ?SiliconEpitaxialPlanarDiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD323/SOT23footprints ?Electricaldataidenticalwiththedevices BAV100...BAV103/BAV200...BAV203 Applications ?Generalpurpose MechanicalData ?Case:MicroMELFGlassCase ?Weigh

Good-Ark

GOOD-ARK Electronics

BAV301

SURFACEMOUNTFASTSWITCHINGDIODE

Features ●Hermeticsealedparts ●Savingspace ●SiliconEpitaxialPlanarDiodes

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

BAV301

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices BAV100toBAV103,BAV200toBAV203 ?Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV301-TR

SmallSignalSwitchingDiodes,HighVoltage

FEATURES ?Siliconepitaxialplanardiodes ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323/SOT-23footprints ?Electricaldataidenticalwiththedevices ??BAV100toBAV103,BAV200toBAV203 ?AEC-Q101qualified ?Materialcategorization:Fordefinitionsofcompliancepleasese

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB-301

BaseboardforoneTMCM-301/TMCM-341andupto3TMCM-035

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB301C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301CAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    ATP301

  • 制造商：

    SANYO

  • 制造商全稱：

    Sanyo Semicon Device

  • 功能描述：

    General-Purpose Switching Device Applications

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/安森美
2022+
TO-252
50000
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
ON
2022+
DPAK (Single Gauge) / ATPAK
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
ON/安森美
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝 假一罰十
 詢價(jià)
ON/安森美
2022+
TO-252
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
ON/安森美
22+
IPAK-5TP-5H
99519
詢價(jià)
Ons
25+
IPAK-5TP-
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
MAGCOM
2016+
SOP
8850
只做原裝,假一罰十,公司專營(yíng)變壓器,濾波器!
 詢價(jià)
ON
24+/25+
2886
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
ON
24+
TO252
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
ON
2018+
TO252
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
 詢價(jià)
更多ATP301供應(yīng)商 更新時(shí)間2025-4-12 14:01:00

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