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AUIRF9952Q中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

AUIRF9952Q
廠商型號(hào)

AUIRF9952Q

功能描述

Advanced Planar Technology Low On-Resistance

文件大小

264.53 Kbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-4 12:00:00

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AUIRF9952Q規(guī)格書詳情

Description

Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

? Advanced Planar Technology

? Low On-Resistance

? Dual N and P Channel MOSFET

? Dynamic dV/dT Rating

? 150°C Operating Temperature

? Fast Switching

? Full Avalanche Rated

? Repetitive Avalanche Allowed up to Tjmax

? Lead-Free, RoHS Compliant

? Automotive Qualified*

產(chǎn)品屬性

  • 型號(hào):

    AUIRF9952Q

  • 功能描述:

    MOSFET AUTO 30V 1 N-CH HEXFET 100mOhms

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Infineon Technologies
24+
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5000
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IR
25+
SO-8
860000
明嘉萊只做原裝正品現(xiàn)貨
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IR
24+
SOP8
9000
只賣原裝只有原裝代理渠道
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IR
24+
SO-8
8000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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INFINEON/英飛凌
23+
SOP-8
85563
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22+
SOP8
20000
原裝現(xiàn)貨 價(jià)格 數(shù)量 來電確認(rèn)
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20+
SO-8
22800
進(jìn)口原裝現(xiàn)貨,假一賠十
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Infineon Technologies
22+
8SO
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
Infineon Technologies
21+
8SO
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IR
20+
SOP-8
63258
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
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