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AUIRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRGB30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

IRGP30B60KD

NPTIGBT

DESCRIPTION ·LowDiodeVF ·10μsShortCircuitCapability ·UltrasoftDiodeReverseRecoveryCharacteristics APPLICATIONS ·LowEMI ·RuggedTransientPerformance ·BenchmarkEfficiencyforMotorControl

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRGP30B60KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage Benefits ?BenchmarkEfficiencyforMotorControl

IRF

International Rectifier

IRGP30B60KD-EP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-247ADPackage ?Lead-Free Benefits ?BenchmarkEfficiencyfor

IRF

International Rectifier

IRGP30B60KD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS30B60

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?MaximumJunctionTemperatureratedat175°C. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?Low

IRF

International Rectifier

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology ?10μsShortCircuitCapability ?SquareRBSOA ?PositiveVCE(on)TemperatureCoefficient ?MaximumJunctionTemperatureratedat175°C ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl ?RuggedTransientPerformance

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    AUIRGS30B60KTRL

  • 功能描述：

    IGBT 晶體管 600V AUTO ULTRAFAST 10-30 KHZ IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Infineon Technologies
23+
TO-263
13000
15年原裝正品企業(yè)
 詢價(jià)
IR
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
Infineon Technologies
21+
D2PAK
800
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!
 詢價(jià)
Infineon
1931+
N/A
493
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
 詢價(jià)
INFINEON
1809+
TO-263
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IR
23+
D2PAK
10000
公司只做原裝正品
 詢價(jià)
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
Infineon Technologies
22+
D2PAK
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
Infineon Technologies
21+
D2PAK
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IR
23+
D2PAK
6000
原裝正品，支持實(shí)單
 詢價(jià)
更多AUIRGS30B60KTRL供應(yīng)商 更新時(shí)間2025-2-7 15:00:00

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