B10G3438N55DZ分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

B10G3438N55DZ屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的B10G3438N55DZ晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

The B10G3438N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution

using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking

device, input splitter, output combiner and pre-match are integrated in a single package.

This multiband device is perfectly suited as a final stage for small cells and massive MIMO

applications in the frequency range from 3400 MHz to 3800 MHz. Available in PQFN

outline.

Features and benefits

? Integrated input splitter

? Integrated output combiner

? 30 ? output impedance thanks to integrated pre-match

? Very high efficiency thanks to asymmetry

? Designed for wideband operation (frequency 3400 MHz to 3800 MHz)

? Independent control of carrier and peaking bias

? Integrated ESD protection

? Source impedance 50 ?; high power gain

? For RoHS compliance see the product details on the Ampleon website

Applications

? RF power MMIC for multi-carrier and multi-standard GSM, W-CDMA and LTE base

stations in the 3400 MHz to 3800 MHz frequency range