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CA3060

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

Intersil

Intersil Corporation

CA3060E

110kHz,OperationalTransconductanceAmplifierArray

Description TheCA3060monolithicintegratedcircuitconsistsofanarrayofthreeindependentOperationalTransconductanceAmplifiers(seeNote).Thistypeofamplifierhasthegenericcharacteristicsofanoperationalvoltageamplifierwiththeexceptionthattheforwardgaincharacteristic

HARRIS

Harris Corporation

CBD3060LCT

LOWVFSCHOTTKYRECTIFIER

PANJITPan Jit International Inc.

強茂強茂股份有限公司

CBRX3060CT

TrenchSchottkyBarrierRectifier

Good-Ark

GOOD-ARK Electronics

CC3060C-AZ

3-phase3-line500VACAvailable5-150AForoutputlineonly

SOSHINSoshin electric Co., Ltd.

雙信電機雙信電機株式會社

CEB3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,105A,RDS(ON)=6mΩ@VGS=10V. RDS(ON)=8mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3060

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,14A,RDS(ON)=7.8m?@VGS=10V. RDS(ON)=11.5m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

詳細參數(shù)

  • 型號：

    B3060

  • 功能描述：

    Logic IC

供應商型號品牌批號封裝庫存備注價格
SANKEN
1948+
TO-220
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
SANKEN
23+
TO-220
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
SANKEN
23+
TO-220
6500
專注配單,只做原裝進口現(xiàn)貨
 詢價
EPCOS
23+
SMD
252
原裝正品--可開增值稅發(fā)票量大可訂貨
 詢價
EPCOS
20+
SMD
56200
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
EPCOS
24+
QFN
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
EPCOS/愛普科斯
2022+
150
全新原裝 貨期兩周
 詢價
EPCOS/愛普科斯
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
EPCOS/愛普科斯
23+
QFN
28533
原盒原標,正品現(xiàn)貨 誠信經營 價格美麗 假一罰十!
 詢價
TDK
20+
SMD
3255
全新原裝正品 現(xiàn)貨 假一罰十
 詢價
更多B3060供應商 更新時間2025-4-24 16:27:00

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