| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PC/104DatacomModules PC/104DatacomModules PCM-3117 PCItoISABridgeModule PCM-3614/3618 4/8-PortRS-422/485High-speedPC/104Module PCM-3614I/3618I 4/8-PortRS-232/422/485PCI-104Modules PCM-3641I/3642I 4/8-PortRS-232PCI-104Modules PCM-3680/I 2-PortCAN-busPC/104/PCI-104ModulewithIsolationPro | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國）有限公司 | ADVANTECH | ||
CABLEASSEMBLY,RG216/U,75OHMNMALETO75OHMNMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
CABLEASSEMBLY,RG216/U,75OHMNMALETO75OHMNMALE | PASTERNACK Pasternack Enterprises, Inc. | PASTERNACK | ||
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
ICforCMOSSystemReset | MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社 | MITSUMI | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
晶體管資料
- 型號(hào)：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-NPN
- 性質(zhì)：
- 封裝形式：
- 極限工作電壓：
60V
- 最大電流允許值：
10A
- 最大工作頻率：
15MHZ
- 引腳數(shù)：
- 可代換的型號(hào)：
3DK10AC,
- 最大耗散功率：
40W
- 放大倍數(shù)：
- 圖片代號(hào)：
NO
- vtest：
60
- htest：
15000000
- atest：
10
- wtest：
40
詳細(xì)參數(shù)
- 型號(hào)：
B3618
- 制造商：
Misc
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PomonaElectronics |
新 |
801 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Pomona Electronics |
2022+ |
797 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Pomona |
2010+ |
N/A |
3528 |
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
POM |
23+ |
原廠封裝 |
5177 |
現(xiàn)貨 |
詢價(jià) | ||
EPCOS |
23+ |
1087 |
專做原裝正品,假一罰百! |
詢價(jià) | |||
EPCOS |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
EPCOS |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
S+M |
00+ |
SMD |
1265 |
全新原裝現(xiàn)貨100真實(shí)自己公司 |
詢價(jià) | ||
SM |
23+ |
SMD |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋齑?詳 |
詢價(jià) | ||
EPSON |
24+ |
瓷封 |
3600 |
絕對(duì)原裝!現(xiàn)貨熱賣! |
詢價(jià) |
