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BA12003BF

7 Circuits Darlinton Transistor Array

GeneralDescription BA12003B/BF,BA12004B/BFaredarlintontransistorarray consistof7circuits,inputresistortolimitbasecurrentand outputsurgeabsorptionclampdiode. Features ■Built-in7circuits ■Highoutputbreakdownvoltage ■HighDCoutputcurrentgain ■Built-ininputres

ROHMRohm

羅姆羅姆半導體集團

BA12003BF-E2

High voltage, high current Darlington transistor array

TheBA12001B,BA12003B,BA12003BF,andBA12004Barehighvoltage,highcurrent,highsustainvoltagetransistorarraysconsistingofsevencircuitsofDarlingtontransistors. Becauseitincorporatesbuilt-insurge-absorbingdiodesandbasecurrent-controlresistorsneededwhenusinginductiveloa

ROHMRohm

羅姆羅姆半導體集團

BA12003BF-E2

7 Circuits Darlinton Transistor Array

GeneralDescription BA12003B/BF,BA12004B/BFaredarlintontransistorarray consistof7circuits,inputresistortolimitbasecurrentand outputsurgeabsorptionclampdiode. Features ■Built-in7circuits ■Highoutputbreakdownvoltage ■HighDCoutputcurrentgain ■Built-ininputres

ROHMRohm

羅姆羅姆半導體集團

BA12004B

High voltage, high current Darlington transistor array

TheBA12001B,BA12003B,BA12003BF,andBA12004Barehighvoltage,highcurrent,highsustainvoltagetransistorarraysconsistingofsevencircuitsofDarlingtontransistors. Becauseitincorporatesbuilt-insurge-absorbingdiodesandbasecurrent-controlresistorsneededwhenusinginductiveloa

ROHMRohm

羅姆羅姆半導體集團

BA12004B

7 Circuits Darlinton Transistor Array

GeneralDescription BA12003B/BF,BA12004B/BFaredarlintontransistorarray consistof7circuits,inputresistortolimitbasecurrentand outputsurgeabsorptionclampdiode. Features ■Built-in7circuits ■Highoutputbreakdownvoltage ■HighDCoutputcurrentgain ■Built-ininputres

ROHMRohm

羅姆羅姆半導體集團

BA12004BF

7 Circuits Darlinton Transistor Array

GeneralDescription BA12003B/BF,BA12004B/BFaredarlintontransistorarray consistof7circuits,inputresistortolimitbasecurrentand outputsurgeabsorptionclampdiode. Features ■Built-in7circuits ■Highoutputbreakdownvoltage ■HighDCoutputcurrentgain ■Built-ininputres

ROHMRohm

羅姆羅姆半導體集團

BA12004BF-E2

7 Circuits Darlinton Transistor Array

GeneralDescription BA12003B/BF,BA12004B/BFaredarlintontransistorarray consistof7circuits,inputresistortolimitbasecurrentand outputsurgeabsorptionclampdiode. Features ■Built-in7circuits ■Highoutputbreakdownvoltage ■HighDCoutputcurrentgain ■Built-ininputres

ROHMRohm

羅姆羅姆半導體集團

BA128

General Purpose Diodes

GeneralPurposeDiodes

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BA1282

Band Switching Diodes

FEATURES ?Siliconplanardiode ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323footprints ?ElectricaldataidenticalwiththedevicesBA682,BA683,BA982,BA983 ?Lowdynamicforwardresistance ?Lowdiodecapacitance ?Highreverseimpedance ?AEC-Q101qualified ?Compliant

VishayVishay Siliconix

威世科技威世科技半導體

BA1282-TR

Band Switching Diodes

FEATURES ?Siliconplanardiode ?Savingspace ?Hermeticsealedparts ?FitsontoSOD-323footprints ?ElectricaldataidenticalwiththedevicesBA682,BA683,BA982,BA983 ?Lowdynamicforwardresistance ?Lowdiodecapacitance ?Highreverseimpedance ?AEC-Q101qualified ?Compliant

VishayVishay Siliconix

威世科技威世科技半導體

晶體管資料

  • 型號:

    BA1A3Q...L4Z

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

    Si-N+R

  • 性質:

    開關管 (S)

  • 封裝形式:

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數:

  • 可代換的型號:

  • 最大耗散功率:

    0.25W

  • 放大倍數:

  • 圖片代號:

    NO

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.25

詳細參數

  • 型號:

    BA1

  • 制造商:

    MISCELLANEOUS

供應商型號品牌批號封裝庫存備注價格
樂韻瑞
25+
SMD
918000
明嘉萊只做原裝正品現貨
詢價
ROHIM
23+
SOP-8
7750
全新原裝優(yōu)勢
詢價
ROHM
24+/25+
395
原裝正品現貨庫存價優(yōu)
詢價
ROHM/羅姆
20+
TO-252
9852
只做原裝正品現貨!或訂貨假一賠十!
詢價
ROHM
24+
SOT-252
3600
絕對原裝!現貨熱賣!
詢價
ROHM
24+
SOIC-8
25000
一級專營品牌全新原裝熱賣
詢價
ROHM
12+
TO-252
15000
全新原裝,絕對正品,公司現貨供應。
詢價
ROHM
25+
SOP14
2500
強調現貨,隨時查詢!
詢價
ROHM
SOP16
46831
正品原裝--自家現貨-實單可談
詢價
ROHM/羅姆
23+
NA
2860
原裝正品代理渠道價格優(yōu)勢
詢價
更多BA1供應商 更新時間2025-4-11 17:01:00