BA299中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
BA299 |
功能描述 | 512Mb C-die NOR FLASH |
文件大小 |
1.5089 Mbytes |
頁(yè)面數(shù)量 |
84 頁(yè) |
生產(chǎn)廠商 | Samsung semiconductor |
企業(yè)簡(jiǎn)稱 |
Samsung【三星】 |
中文名稱 | 三星半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-5-18 16:42:00 |
人工找貨 | BA299價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
BA299規(guī)格書詳情
GENERAL DESCRIPTION
The K8A(10/11/12/13)15E featuring single 1.8V power supply is a 512Mbit Muxed Burst Multi Bank Flash Memory organized as 32Mx16. The memory architecture of the device is designed to divide its memory arrays into 512blocks(Uniform block part)/515blocks(Boot block part) with independent hardware protection. This block architecture provides highly flexible erase and program capability. The K8A(10/11/12/13)15E NOR Flash consists of sixteen banks. This device is capable of reading data from one bank while programming or erasing in the other bank. Regarding read access time, the K8A10/1215E provides an 11ns burst access time and an 95ns initial access time at 66MHz.
FEATURES
? Single Voltage, 1.7V to 1.95V for Read and Write operations
? Organization
- 33,554,432 x 16 bit (Word Mode Only)
? Read While Program/Erase Operation
? Multiple Bank Architecture
- 16 Banks (32Mb Partition)
? OTP Block : Extra 512-Word block
? Read Access Time (@ CL=30pF)
- Asynchronous Random Access Time : 100ns
- Synchronous Random Access Time :95ns
- Burst Access Time :
11ns(66Mhz) / 9ns(83Mhz) / 7ns (108MHz) / 6ns (133MHz)
? Page Mode Operation
16Words Page access allows fast asynchronous read Page Read Access Time :
18ns(66/83Mhz) / 15ns(108/133Mhz)
? Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with Wrap
? Block Architecture
- Uniform block part (K8A(10/11/12/13)15EZC) :
Five hundred twelve 64Kword blocks
- Boot block part (K8A(10/11/12/13)15ET(B)C) :
Four 16Kword blocks and five hundred eleven 64Kword blocks (Bank 0 contains four 16 Kword blocks and thirty-one 64Kword blocks, Bank 1 ~ Bank 15 contain four hundred eighty 64Kword blocks)
? Reduce program time using the VPP
? Support 512-word Buffer Program
? Power Consumption (Typical value, CL=30pF)
- Synchronous Read Current : 35mA
- Program/Erase Current : 25mA
- Read While Program/Erase Current : 45mA
- Standby Mode/Auto Sleep Mode : 30uA
? Block Protection/Unprotection
- Using the software command sequence
- Last two boot blocks are protected by WP=VIL
(Boot block part : K8A(10/11/12/13)15ET(B)C)
- Last one block (BA511) is protected by WP=VIL
(Uniform block part : K8A(10/11/12/13)15EZC)
- All blocks are protected by VPP=VIL
? Handshaking Feature
- Provides host system with minimum latency by monitoring RDY
? Erase Suspend/Resume
? Program Suspend/Resume
? Unlock Bypass Program/Erase
? Hardware Reset (RESET)
? Deep Power Down Mode
? Data Polling and Toggle Bits
- Provides a software method of detecting the status of program or erase completion
? Endurance
- 100K Program/Erase Cycles Minimum
? Extended Temperature : -25°C ~ 85°C
? Support Common Flash Memory Interface
? Output Driver Control by Configuration Register
? Low Vcc Write Inhibit
? Package : TBD
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ROHM |
22+ |
SSOP |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
LEDBRIGHT |
24+ |
DIP |
274 |
詢價(jià) | |||
LEDBRIGHT |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
LEDBRIGHT |
23+ |
原廠正規(guī)渠道 |
5000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
MEMO |
2447 |
SMD |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
IBM |
23+ |
380 |
詢價(jià) | ||||
ROHM |
23+ |
SSOP |
8890 |
價(jià)格優(yōu)勢(shì)、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢 |
詢價(jià) | ||
ROHM |
2025+ |
SSOP |
3587 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
SAMWHA/三和 |
23+ |
10X16 |
60428 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋?kù)存,詳 |
詢價(jià) | ||
24+ |
N/A |
62000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) |