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BR350

WaterproofBorescope/InspectionCameras

EXTECH

Extech Instruments Corporation.

BRUS350

ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING

edi

Electronic devices inc.

BSP350

MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maxi

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BSP350

MiniPROFET(High-sideswitchShort-circuitprotectionOvertemperatureprotectionwithhysteresis)

MiniPROFET ?High-sideswitch ?Short-circuitprotection ?Overtemperatureprotectionwithhysteresis ?Overloadprotection ?Overvoltageprotection ?Reversebatteryprotection1) ?Switchinginductiveload ?Clampofnegativeoutputvoltagewithinductiveloads ?Maximumcurrentinternal

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSWM350DH-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BSWM350DV-PCB

Solidstatepressureswitchwithanalogoutput

SENSORTECHNICS

Sensortechnics GmbH

BUZ350

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ350

SIPMOSPowerTransistor

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BUZ350

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

C350

PhaseControlSCR115AmperesAvg500-1300Volts

Description: PowerexSiliconControlledRectifers(SCR)aredesignedforphasecontrolapplications.Theseareall-diffused,Press-Pak(Pow-R-Disc)devicesemployingthefield-provenamplifying(di/namic)gate. Features: □LowOn-StateVoltage □Highdi/dt □Highdv/dt □HermeticPackaging □

POWEREX

Powerex Power Semiconductors

詳細(xì)參數(shù)

  • 型號：

    BB350

  • 制造商：

    EGS ELECTRICAL GROUP

  • 功能描述：

    3-1/2 IN INSLG BSHG MALE THRD

供應(yīng)商型號品牌批號封裝庫存備注價格
BB
24+
CAN8
21322
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
BB
23+
CAN
5000
原裝正品,假一罰十
 詢價
BB
23+
TO
8890
價格優(yōu)勢、原裝現(xiàn)貨、客戶至上。歡迎廣大客戶來電查詢
 詢價
BB
23+
500
詢價
2022+
6000
全新原裝 貨期兩周
 詢價
BB
98+
TO-99
850
普通
 詢價
BB
TO-99
8650
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
BB
23+
原廠原裝
5177
現(xiàn)貨
 詢價
22+
5000
詢價
BB
2023+
CAI
8700
原裝現(xiàn)貨
 詢價
更多BB350供應(yīng)商 更新時間2025-4-5 14:02:00

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