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BC857S

PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

PNPSiliconAFTransistorArray ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BC857S

PNP Silicon AF Transistor Array

PNPSiliconAFTransistorArrays ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage ?BC856S/U,BC857S:Fororientationinreelseepackageinformation

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC857S

Surface mount Si-Epitaxial PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors ?Powerdissipation300mW ?PlasticcaseSOT-363 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

Diotec

Diotec Semiconductor

BC857S

PNP Multi-Chip General Purpose Amplifier

PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto200mA.SourcedfromProcess68.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BC857S

Multi-Chip Transistor

Features PowerdissipationPCM:0.3W(Tamp.=25°C) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-50V Operating&StoragejunctionTemperatureTj,Tstg:-55°C~+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BC857S

PNP Plastic-Encapsulate Transistors 300mW

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Multi-chipTransistor ?Ultra-SmallSurfaceMountPackage ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityL

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

BC857S

Multi-Chip TRANSISTOR (PNP)

FEATURES PowerdissipationPCM:300mW(Tamb=25℃) CollectorcurrentICM:-200mA Collector-basevoltageV(BR)CBO:-50V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導體深圳市金譽半導體股份有限公司

BC857S

Dual PNP Small Signal Surface Mount Transistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryNPNtypeavailableBC847S. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●ForLowpoweramplificationandswitching.

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀微電子股份有限公司

BC857S

Marking：3C；Package：SOT-363；PNP Transistors

■Features ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●ForAFinputstagesanddriverapplications

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

BC857S

Power dissipation, plastic case, Weight approx

SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation300mW ?PlasticcaseSOT-363 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

詳細參數(shù)

  • 型號：

    BC857S

  • 功能描述：

    兩極晶體管 - BJT SOT-23 PNP GP AMP

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    PNP 集電極—基極電壓

  • VCBO：

    集電極—發(fā)射極最大電壓

  • VCEO：

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO：

    - 6 V

  • 增益帶寬產(chǎn)品fT：

    直流集電極/Base Gain hfe

  • Min：

    100 A

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    PowerFLAT 2 x 2

供應商型號品牌批號封裝庫存備注價格
INF
24+
SOP
60000
進口原裝現(xiàn)貨
 詢價
Infineon(英飛凌)
24+
標準封裝
12048
原廠渠道供應,大量現(xiàn)貨,原型號開票。
 詢價
INFINEON
04+
SOT-363
6000
原裝正品現(xiàn)貨
 詢價
長電
24+
SOT-363
890000
全新原裝現(xiàn)貨,假一罰十
 詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
N/A
23+
SC70-6
29600
一級分銷商!
 詢價
INFINEON
24+
SC70-6
6000
一級代理保證進口原裝正品現(xiàn)貨假一罰十價格合理
 詢價
CJ/長電
2021+
SOT-363
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
05+
原廠原裝
6051
只做全新原裝真實現(xiàn)貨供應
 詢價
INFINEON
24+
SOT363
3600
絕對原裝!現(xiàn)貨熱賣!
 詢價
更多BC857S供應商 更新時間2025-4-14 15:19:00

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