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BC858C

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BC858C

Switching and Amplifier Applications

Features ?SwitchingandAmplifierApplications ?Suitableforautomaticinsertioninthickandthin-filmcircuits ?LowNoise:BC859,BC860 ?ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BC858C

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●ComplementaryNPNTypes:BC846–BC848 ●ForSwitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) ●QualifiedtoAEC-Q101StandardsforH

DIODES

Diodes Incorporated

BC858C

PNP Small Signal Transistor 310mW

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●IdeallySuitedforAutomaticInsertion ●150°CJunctionTemperature ●ForSwitchingandAFAmplifierAppli

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC858C

Marking:3Ls;Package:SOT-23;PNP Silicon AF Transistors

PNPSiliconAFTransistors ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Lownoisebetween30Hzand15kHz ?Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC858C

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors ?Powerdissipation250mW ?PlasticcaseSOT-23 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagin

Diotec

Diotec Semiconductor

BC858C

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORBC856,BC857andBC858SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:PLEASESEEMARKINGCODET

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

BC858C

General Purpose Transistor PNP Silicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

BC858C

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features ?IdeallySuitedforAutomaticInsertion ?ComplementaryNPNTypesAvailable(BC846-BC848) ?ForSwitchingandAFAmplifierApplications ?LeadFree/RoHSCompliant(Note3)

DIODES

Diodes Incorporated

BC858C

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE65/45/30VoltsPOWER225mW FEATURES ?GeneralPurposeAmplifierApplications ?NPNEpitaxialSilicon,PlanarDesign ?CollectorCurrentIC=-100mA ?Complimentary(PNP)Devices:BC846/BC847/BC848/BC849Series ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    BC858C

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 晶體管類型:

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    650mV @ 5mA,100mA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    420 @ 2mA,5V

  • 頻率 - 躍遷:

    150MHz

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-236-3,SC-59,SOT-23-3

  • 供應(yīng)商器件封裝:

    SOT-23-3

  • 描述:

    TRANS PNP 30V 0.1A SOT23-3

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Taiwan
24+
TO-236-3,SC-59,SOT-23-3
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
長(zhǎng)電
24+
SOT-23
890000
全新原裝現(xiàn)貨,假一罰十
詢價(jià)
Infineon/英飛凌
24+
SOT23
163000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
詢價(jià)
ON/NXP
24+
SOT-23
57200
新進(jìn)庫(kù)存/原裝
詢價(jià)
SMG
05+
原廠原裝
55
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
INFINEON
2016+
SOT23
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價(jià)
FAIRCHILD
24+
原廠封裝
5910
原裝現(xiàn)貨假一罰十
詢價(jià)
NXP
23+
SOT-23
5000
原裝正品,假一罰十
詢價(jià)
INFINEON
23+
SOT-23
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
INF
2020+
SOT23
985000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
更多BC858C供應(yīng)商 更新時(shí)間2025-4-1 17:29:00