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BTS116

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BUL116

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BUL116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULD116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BULT116D

MEDIUMVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusingMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesignedforuse

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BYV116

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BYV116B

RectifierdiodesSchottkybarrier

GENERALDESCRIPTION Dualschottkyrectifierdiodesintendedforuseasoutputrectifiersinlowvoltage,highfrequencyswitchedmodepowersupplies. TheBYV116seriesissuppliedintheSOT78(TO220AB)conventionalleadedpackage. TheBYV116BseriesissuppliedintheSOT404surfacemountingp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

CDST116-G

SMDSwitchingDiode

Features -Lowleakagecurrentapplications. -Mediumspeedswitchingtimes.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CDST116-G

SMDSwitchingDiode

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CM116

G-41/2MiniatureBayonetBase

G-41/2MiniatureBayonetBase G-41/2MiniatureScrewBase G-41/2Miniature2PinBase

CML

Chicago Miniature Lamp,inc

晶體管資料

  • 型號:

    BD116

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    3A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BD130,BDY92,2N3055,3DA4C,

  • 最大耗散功率:

    15W

  • 放大倍數(shù):

  • 圖片代號:

    E-44

  • vtest:

    80

  • htest:

    999900

  • atest:

    3

  • wtest:

    15

詳細(xì)參數(shù)

  • 型號:

    BD116

  • 制造商:

    ROHM

  • 制造商全稱:

    Rohm

  • 功能描述:

    USB Switch ICs DPDT Type(Double Pole Double Throw)

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
TO-3
10000
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ST
1738+
TO-3
8529
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MOTO/ON/ST/SGS
23+
TO-3
81112
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道。可提供大量庫存,詳
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ST
22+
TO-3
66900
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ST
23+
TO-3
16900
正規(guī)渠道,只有原裝!
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SGS
23+
20000
正品原裝貨價(jià)格低
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ST
21+
TO-3
23480
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ROHM
2016+
SON10
3500
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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ROHM
23+
SON-10
5000
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ROHM
23+
NA
3486
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更多BD116供應(yīng)商 更新時(shí)間2025-4-6 16:00:00