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BD135-10

NPN Plastic Encapsulated Transistor

FEATURES ?Highcurrent ?ComplementtoBD136,BD138andBD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BD135-10

NPN Plastic Encapsulated Transistor

FEATURES Highcurrent ComplementtoBD136,BD138andBD140

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

BD13510STU

Medium Power Linear and Switching Applications

Features ?ComplementtoBD136,BD138andBD140respectively Applications ?MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD13510STU

NPN Epitaxial Silicon Transistor

Features ?ComplementtoBD136,BD138andBD140respectively Applications ?MediumPowerLinearandSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BD135-16

NPN SILICON TRANSISTORS

NPNSiliconTransistors ForAFdriverandoutputstagesofmediumperformance

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD135-16

NPN power transistors

DESCRIPTION NPNpowertransistorinaTO-126;SOT32plasticpackage.PNPcomplements:BD136,BD138andBD140 FEATURES ?Highcurrent(max.1.5A) ?Lowvoltage(max.80V). APPLICATIONS ?Driverstagesinhi-fiamplifiersandtelevisioncircuits.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BD135-16

Power Transistors NPN Silicon 45,60,80 Volts

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?EpoxymeetsUL94V-0flammabilityrating ?MoisureSensitivityLevel1 ?DCCurrentGain-hFE=40(Min)@IC=

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BD135-16

Complementary low voltage transistor

Description TheseepitaxialplanartransistorsaremountedintheSOT-32plasticpackage.Theyaredesignedforaudioamplifiersanddriversutilizingcomplementaryorquasi-complementarycircuits.TheNPNtypesaretheBD135andBD139,andthecomplementaryPNPtypesaretheBD136andBD140. Fe

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

BD135-16

NPN Plastic Encapsulated Transistor

FEATURES ?Highcurrent ?ComplementtoBD136,BD138andBD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

BD135-16

Complementary low voltage transistor

Features ■Productsarepre-selectedinDCcurrentgain Application ■Generalpurpose Description Theseepitaxialplanartransistorsaremountedin theSOT-32plasticpackage.Theyaredesigned foraudioamplifiersanddriversutilizing complementaryorquasi-complementarycircuits.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

晶體管資料

  • 型號:

    BD135(-6...-16)

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    45V

  • 最大電流允許值:

    1.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD165,BD175,BD226,BD233,BD437,3DA1B,

  • 最大耗散功率:

    12.5W

  • 放大倍數(shù):

  • 圖片代號:

    B-21

  • vtest:

    45

  • htest:

    999900

  • atest:

    1.5

  • wtest:

    12.5

產(chǎn)品屬性

  • 產(chǎn)品編號:

    BD135

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    散裝

  • 晶體管類型:

    NPN

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    500mV @ 50mA,500mA

  • 電流 - 集電極截止(最大值):

    100nA(ICBO)

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    40 @ 150mA,2V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-225AA,TO-126-3

  • 供應(yīng)商器件封裝:

    TO-126

  • 描述:

    TRANS NPN 45V 1.5A TO126

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
STM
22+
SOT-32-3 (TO-126-3)
7750
詢價(jià)
ST(意法半導(dǎo)體)
24+
SOT-32
10000
只做原裝現(xiàn)貨 假一賠萬
詢價(jià)
STM
23+
SOT-32-3 (TO-126-3)
10850
原裝現(xiàn)貨支持送檢
詢價(jià)
ST/意法
18+
SMD
654
正規(guī)渠道原裝正品
詢價(jià)
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
詢價(jià)
PHI
05+
原廠原裝
50051
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
PHILIPS
23+
TO-126
12300
詢價(jià)
MOT
24+
50
詢價(jià)
STM
24+
原廠封裝
293000
原裝現(xiàn)貨假一罰十
詢價(jià)
23+
TO-92L
5000
全新原裝的現(xiàn)貨
詢價(jià)
更多BD135供應(yīng)商 更新時(shí)間2025-4-11 9:30:00