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BFR181W

NPNSiliconRFTransistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?EasytousePb-free(RoHScompliant)andhalogenfreeindustrystandardpackagewithvisibleleads ?Qualificationreport

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFR181W

LowNoiseSiliconBipolarRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.2dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFY181

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY181S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollector currentsfrom0,5mAto12mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.2dBat2GHz ?eesaSpaceQualified ESA/SCCDetailS

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH181

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當科技亞當科技股份有限公司

晶體管資料

  • 型號:

    BD181

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    55V

  • 最大電流允許值:

    15A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    2

  • 可代換的型號:

    BD130,BDX10,BDY20,BDY39,2N3055,3DD66B,

  • 最大耗散功率:

    117W

  • 放大倍數(shù):

  • 圖片代號:

    E-44

  • vtest:

    55

  • htest:

    999900

  • atest:

    15

  • wtest:

    117

詳細參數(shù)

  • 型號:

    BD181

  • 功能描述:

    NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
TO-3
10000
詢價
MIS
24+
原廠封裝
3000
原裝現(xiàn)貨假一罰十
詢價
GE
23+
NA
39960
只做進口原裝,終端工廠免費送樣
詢價
IR
23+
原廠封裝
5177
現(xiàn)貨
詢價
FSC
23+
TO-126F
120
全新原裝正品現(xiàn)貨,支持訂貨
詢價
FSC
20+
TO-126F
120
進口原裝現(xiàn)貨,假一賠十
詢價
N/A
2016+
CAN
6528
只做原裝正品現(xiàn)貨!或訂貨!假一賠十!
詢價
N/A
CAN
6688
15
現(xiàn)貨庫存
詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
3000
原裝鐵帽專營,代理渠道量大可訂貨
詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
更多BD181供應(yīng)商 更新時間2025-4-4 14:30:00