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BFY182

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182

HiRelNPNSiliconRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182ES

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182H

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182P

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY182S

HiRelNPNSiliconRFTransistor

HiRelNPNSiliconRFTransistor ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA. ?Hermeticallysealedmicrowavepackage ?fT=8GHz F=2.4dBat2GHz ?eesaSpaceQualified ESA/SCCDetailSpec.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH182

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當科技亞當科技股份有限公司

BLF182XR

PowerLDMOStransistor

Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit

AmpleonAmpleon USA Inc.

安譜隆

BLF182XRS

PowerLDMOStransistor

Generaldescription A250WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegrateddoublesidedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstabilit

AmpleonAmpleon USA Inc.

安譜隆

BTS-EL182S

GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices.

BURLAND

Burland Technology Solutions

詳細參數(shù)

  • 型號：

    BD182M

  • 制造商：

    Thomas & Betts

  • 功能描述：

    STAKON TAPE TERMINALS

供應商型號品牌批號封裝庫存備注價格
ST/意法
23+
TO-126
18500
原廠授權代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳
 詢價
ST
21+
TO-126
23480
詢價
24+
TO-3
10000
詢價
MOTOROLA
24+
TO-3
3000
原裝現(xiàn)貨假一罰十
 詢價
PHI
1738+
TO-3
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
TH
23+
NA
630
專做原裝正品,假一罰百!
 詢價
MOTOROLA
專業(yè)鐵帽
TO-3
3000
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
MOTOROLA/摩托羅拉
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
 詢價
PH/ST
23+
SOT-223
5177
現(xiàn)貨
 詢價
ROHM/羅姆
23+
VSON10FV3030
24500
羅姆全系列在售
 詢價
更多BD182M供應商 更新時間2025-4-7 16:41:00

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