零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
VHFpowerMOStransistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistorencapsulatedina4-lead,SOT121flangepackage,withaceramiccap.Allleadsareisolatedfromtheflange.Amarkingcode,showinggate-sourcevoltage(VGS)informationisprovidedformatchedpairapplications.Refertot | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
VHFPOWERMOSFET DESCRIPTION: TheASIBLF246isaverticalD-MOStransistordesignedforlargesignalamplifierapplicationsintheVHFfrequencyrange. FEATURESINCLUDE: ?PG=13dBTypicalat175MHz ?30:1LoadVSWRCapability ?Omnigold?metalizationsystem | ASI Advanced Semiconductor | ASI | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
VHFpowerMOStransistor | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
VHPpowerMOStransistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOStransistorencapsulatedina4-lead,SOT121Bflangepackagewithaceramiccap.Allleadsareisolatedfromtheflange.Amarkingcode,showinggate-sourcevoltage(VGs)informationisprovidedformatchedpairapplications.Refertot | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
VHFpush-pullpowerMOStransistor DESCRIPTION SiliconN-channelenhancementmodeverticalD-MOSpush-pulltransistorencapsulatedinan8-leadSOT161Abalancedflangepackagewithaceramiccap.Allleadsareisolatedfromtheflange. FEATURES ?Highpowergain ?Easypowercontrol ?Goodthermalstability ?Goldmetallizati | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
GuardsagainstaccidentaldisconnectionofComputers,PDU’s,ServersandmostNetworkDevices. | BURLAND Burland Technology Solutions | BURLAND | ||
InsulKrimp??ButtSplicefor10-12AWGWire | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
BUTTSPLICEINSULKRIMPTAPED(C-246XT) | MOLEX4Molex Electronics Ltd. 莫仕 | MOLEX4 | ||
WirelessChargIngManagementChIp | WCHNanjing Qinheng Microelectronics Co., Ltd. 沁恒微電子南京沁恒微電子股份有限公司 | WCH |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-PNP
- 性質(zhì):
低頻或音頻放大 (LF)_功率放大 (L)
- 封裝形式:
直插封裝
- 極限工作電壓:
80V
- 最大電流允許值:
10A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
BD250B,BD214/80,BD258/80,TIP34B,3CD10C,
- 最大耗散功率:
80W
- 放大倍數(shù):
- 圖片代號:
B-62
- vtest:
80
- htest:
999900
- atest:
10
- wtest:
80
詳細(xì)參數(shù)
- 型號:
BD246B
- 功能描述:
兩極晶體管 - BJT 80W PNP Silicon
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
TO-3PN |
10000 |
全新 |
詢價 | |||
ST |
24+ |
TO-218 |
15000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
BOURNS |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
ST |
1738+ |
TO-3P |
8529 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 | ||
ST |
22+ |
TO-3P |
6000 |
十年配單,只做原裝 |
詢價 | ||
bourns |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
N/A |
23+ |
原廠封裝 |
5177 |
現(xiàn)貨 |
詢價 | ||
ST |
22+ |
TO-3P |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價 | ||
ST |
25+ |
TO-3P |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價 | ||
ST |
21+ |
TO-3P |
23480 |
詢價 |